JPH0324439B2 - - Google Patents
Info
- Publication number
- JPH0324439B2 JPH0324439B2 JP21591185A JP21591185A JPH0324439B2 JP H0324439 B2 JPH0324439 B2 JP H0324439B2 JP 21591185 A JP21591185 A JP 21591185A JP 21591185 A JP21591185 A JP 21591185A JP H0324439 B2 JPH0324439 B2 JP H0324439B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- thin film
- sic
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 41
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 36
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 239000001294 propane Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000010000 carbonizing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21591185A JPS6272598A (ja) | 1985-09-26 | 1985-09-26 | 炭化珪素単結晶基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21591185A JPS6272598A (ja) | 1985-09-26 | 1985-09-26 | 炭化珪素単結晶基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6272598A JPS6272598A (ja) | 1987-04-03 |
| JPH0324439B2 true JPH0324439B2 (en]) | 1991-04-03 |
Family
ID=16680289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21591185A Granted JPS6272598A (ja) | 1985-09-26 | 1985-09-26 | 炭化珪素単結晶基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6272598A (en]) |
-
1985
- 1985-09-26 JP JP21591185A patent/JPS6272598A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6272598A (ja) | 1987-04-03 |
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